Improved electrical property of Sb-doped SnO2 nanonets as measured by contact and non-contact approaches

• Main Authors: Liu, Hongwei, Sun, Cheng, Lu, Junpeng, Zheng, Minrui, Lim, Kim Yong, Mathews, Nripan, Mhaisalkar, Subodh Gautam, Tang, Sing Hai, Zhang, Xinhai, Sow, Chorng Haur
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/85273; http://hdl.handle.net/10220/10579
• Institution: Nanyang Technological University

This work reports the characterization of antimony doping effects on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude–Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire–nanowire junction barriers.