Epitaxial BiFeO3 thin films on Si

• المؤلفون الرئيسيون: Droopad, R., Yu, J., Wang, J., Zheng, H., Ma, Z., Prasertchoung, S., Wuttig, M., Eisenbeiser, K., Ramesh, R.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85279; http://hdl.handle.net/10220/6902
• المؤسسة: Nanyang Technological University

BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron...