Epitaxial BiFeO3 thin films on Si

Epitaxial BiFeO3 thin films on Si

BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron...

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Bibliographic Details
Main Authors: Droopad, R., Yu, J., Wang, J., Zheng, H., Ma, Z., Prasertchoung, S., Wuttig, M., Eisenbeiser, K., Ramesh, R.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:https://hdl.handle.net/10356/85279
http://hdl.handle.net/10220/6902
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Institution: Nanyang Technological University
Language: English
Description
Summary:BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ~45μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ~60 pm/V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.

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