SiGe bandgap tuning for high speed eam

• المؤلفون الرئيسيون: Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali Z., Bernier, Nicolas, Robin, Eric, Bucio, Thalía Domínguez, Littlejohns, Callum G., Gardes, Frederic Y., Rouviere, J.-L., Dansas, Hugo, Gambacorti, Narciso, Mashanovich, Goran Z.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: SiGe; Bandgap; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85355; http://hdl.handle.net/10220/48204
• المؤسسة: Nanyang Technological University

We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, an...