Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure

• المؤلفون الرئيسيون: Duan, Tian Li, Pan, Ji Sheng, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering; Gallium Oxide; Gallium Nitride
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85429; http://hdl.handle.net/10220/48222

The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. XPS study shows a decrease in...