Ripple rotation on ion sputtered Si (100)
Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose...
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sg-ntu-dr.10356-855202020-03-07T13:19:24Z Ripple rotation on ion sputtered Si (100) Qian, H. X. Zhou, W. School of Mechanical and Aerospace Engineering Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose, ripple with wavelength of 400 nm was oriented perpendicular to the ion beam direction. However ripple with larger wavelength of 1 μm was rotated with increasing ion dose. The orientation of rotated ripple was observed to be still dependent on the ion beam direction. Such rotated ripple structures can be explained by the nonlinear sputter patterning model. 2013-11-05T06:01:40Z 2019-12-06T16:05:20Z 2013-11-05T06:01:40Z 2019-12-06T16:05:20Z 2012 2012 Journal Article Qian, H. X., & Zhou, W. (2012). Ripple rotation on ion sputtered Si (100). Materials Letters, 77, 113-116. 0167-577X https://hdl.handle.net/10356/85520 http://hdl.handle.net/10220/17279 10.1016/j.matlet.2012.03.003 en Materials letters |
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Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose, ripple with wavelength of 400 nm was oriented perpendicular to the ion beam direction. However ripple with larger wavelength of 1 μm was rotated with increasing ion dose. The orientation of rotated ripple was observed to be still dependent on the ion beam direction. Such rotated ripple structures can be explained by the nonlinear sputter patterning model. |
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School of Mechanical and Aerospace Engineering |
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School of Mechanical and Aerospace Engineering Qian, H. X. Zhou, W. |
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Qian, H. X. Zhou, W. |
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Qian, H. X. Zhou, W. Ripple rotation on ion sputtered Si (100) |
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Qian, H. X. |
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Ripple rotation on ion sputtered Si (100) |
title_short |
Ripple rotation on ion sputtered Si (100) |
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Ripple rotation on ion sputtered Si (100) |
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Ripple rotation on ion sputtered Si (100) |
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Ripple rotation on ion sputtered Si (100) |
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ripple rotation on ion sputtered si (100) |
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2013 |
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https://hdl.handle.net/10356/85520 http://hdl.handle.net/10220/17279 |
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