Ripple rotation on ion sputtered Si (100)

• Main Authors: Qian, H. X., Zhou, W.
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/85520; http://hdl.handle.net/10220/17279
• Institution: Nanyang Technological University

Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose...