Ripple rotation on ion sputtered Si (100)
Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/85520 http://hdl.handle.net/10220/17279 |
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| Institution: | Nanyang Technological University |
| Language: | English |