Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

• Main Authors: Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Heterostructures; Valley
• Online Access: https://hdl.handle.net/10356/86493; http://hdl.handle.net/10220/46155
• Institution: Nanyang Technological University

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for local excitons and tens of nanosecond for interlayer excitons. Here we show that the dark excitons in two-dimensional heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence. The long lifetime and valley polarization lifetime of the dark exciton in two-dimensional heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.