Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that...

Full description

Saved in:
Bibliographic Details
Main Authors: Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/86493
http://hdl.handle.net/10220/46155
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Be the first to leave a comment!
You must be logged in first