Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

• Main Authors: Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2018
• 主題: Heterostructures; Valley
• 在線閱讀: https://hdl.handle.net/10356/86493; http://hdl.handle.net/10220/46155

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that...