Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures

• Main Authors: Jiang, Chongyun, Xu, Weigao, Rasmita, Abdullah, Huang, Zumeng, Li, Ke, Xiong, Qihua, Gao, Wei-bo
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Heterostructures; Valley
• Online Access: https://hdl.handle.net/10356/86493; http://hdl.handle.net/10220/46155
• Institution: Nanyang Technological University

Transition metal dichalcogenides have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that...