A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a s...

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Bibliographic Details
Main Authors: Berco, Dan, Chand, Umesh, Fariborzi, Hossein
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Materials
Transition
Online Access:https://hdl.handle.net/10356/86697
http://hdl.handle.net/10220/44188
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/86697
http://hdl.handle.net/10220/44188

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