A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

• Main Authors: Berco, Dan, Chand, Umesh, Fariborzi, Hossein
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Materials; Transition
• Online Access: https://hdl.handle.net/10356/86697; http://hdl.handle.net/10220/44188
• Institution: Nanyang Technological University

This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a s...