Restoration of postbreakdown gate oxide by white-light illumination
From conductive-atomic-force-microscope probe measurement, we show that electrical conduction through a nanoscale percolation path in the MOSFET gate oxide can be disrupted, either completely or partially, by white-light illumination. This phenomenon is consistently observed in the SiO2 and HfO2 gat...
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| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2018
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/86729 http://hdl.handle.net/10220/45199 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | From conductive-atomic-force-microscope probe measurement, we show that electrical conduction through a nanoscale percolation path in the MOSFET gate oxide can be disrupted, either completely or partially, by white-light illumination. This phenomenon is consistently observed in the SiO2 and HfO2 gate-oxide materials, and thus is believed to have originated from a common mechanism-light-stimulated oxygen migration and recombination with vacancy sites that constitute the percolation path. The finding points to the prospect of reliability rejuvenation by the light-assisted restoration of postelectrical-breakdown gate oxides, as well as light-enabled memory operation based on logic MOSFET devices. |
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