Restoration of postbreakdown gate oxide by white-light illumination

• المؤلفون الرئيسيون: Kawashima, Tomohito, Yew, Kwang Sing, Zhou, Yu, Ang, Diing Shenp, Bera, Milan Kumar, Zhang, Haizhong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: CMOS Memory; Gate Oxide Breakdown
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86729; http://hdl.handle.net/10220/45199

From conductive-atomic-force-microscope probe measurement, we show that electrical conduction through a nanoscale percolation path in the MOSFET gate oxide can be disrupted, either completely or partially, by white-light illumination. This phenomenon is consistently observed in the SiO2 and HfO2 gat...