Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser
Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature.
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sg-ntu-dr.10356-878052020-09-26T22:15:23Z Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser Liu, Chongyang Wang, Rui Wang, Hong Meng, Qianqian Ang, Kian Siong School of Electrical and Electronic Engineering Asia Communications and Photonics Conference 2014 Nanoelectronics Centre of Excellence Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering Quantum-Well, -Wire And -Dot Devices Semiconductor Lasers Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature. Published version 2018-12-04T09:25:26Z 2019-12-06T16:49:51Z 2018-12-04T09:25:26Z 2019-12-06T16:49:51Z 2014 Conference Paper Liu, C., Wang, R., Wang, H., Meng, Q., & Ang, K. S. (2014). Investigation of Temperature-dependent Lasing and Optical Gain Characteristics of 1.3-μm InAs Quantum Dot Laser. Asia Communications and Photonics Conference 2014, ATh3A.4-. doi:10.1364/ACPC.2014.ATh3A.4 https://hdl.handle.net/10356/87805 http://hdl.handle.net/10220/46806 10.1364/ACPC.2014.ATh3A.4 en © 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: [http://dx.doi.org/10.1364/ACPC.2014.ATh3A.4]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Quantum-Well, -Wire And -Dot Devices Semiconductor Lasers Liu, Chongyang Wang, Rui Wang, Hong Meng, Qianqian Ang, Kian Siong Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
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Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Liu, Chongyang Wang, Rui Wang, Hong Meng, Qianqian Ang, Kian Siong |
format |
Conference or Workshop Item |
author |
Liu, Chongyang Wang, Rui Wang, Hong Meng, Qianqian Ang, Kian Siong |
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Liu, Chongyang |
title |
Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
title_short |
Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
title_full |
Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
title_fullStr |
Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
title_full_unstemmed |
Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
title_sort |
investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser |
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2018 |
url |
https://hdl.handle.net/10356/87805 http://hdl.handle.net/10220/46806 |
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1681057614441480192 |