Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser
Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature.
Saved in:
Main Authors: | Liu, Chongyang, Wang, Rui, Wang, Hong, Meng, Qianqian, Ang, Kian Siong |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/87805 http://hdl.handle.net/10220/46806 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
by: Zhang, Yi Ping, et al.
Published: (2017) -
Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
by: Xu, S.J., et al.
Published: (2014) -
Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates
by: Xu, S.J., et al.
Published: (2014) -
Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser
by: Li, Xiang, et al.
Published: (2018) -
Thermal Effects and Small Signal Modulation of 1.3-?m InAs/GaAs Self-Assembled Quantum-Dot Lasers
by: Zhao, H.X, et al.
Published: (2020)