Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

10.1186/1556-276X-6-382

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Bibliographic Details
Main Authors: Zhao, H, Yoon, S.F, Ngo, C.Y, Wang, R
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: SpringerOpen 2020
Subjects:
Annealing condition
As-grown
InAs/GaAs
Modulation bandwidth
Modulation characteristics
Modulation efficiency
Nonradiative recombination centers
QD lasers
Recombination process
Ground state
Modulation
Rapid thermal annealing
Semiconductor quantum dots
Quantum dot lasers
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183911
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/183911

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