Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

10.1186/1556-276X-6-382

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Bibliographic Details
Main Authors:	Zhao, H, Yoon, S.F, Ngo, C.Y, Wang, R
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	SpringerOpen 2020
Subjects:	Annealing condition As-grown InAs/GaAs Modulation bandwidth Modulation characteristics Modulation efficiency Nonradiative recombination centers QD lasers Recombination process Ground state Modulation Rapid thermal annealing Semiconductor quantum dots Quantum dot lasers
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183911
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Institution:	National University of Singapore

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Summary:	10.1186/1556-276X-6-382