Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

10.1186/1556-276X-6-382

Saved in:

Bibliographic Details
Main Authors:	Zhao, H, Yoon, S.F, Ngo, C.Y, Wang, R
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	SpringerOpen 2020
Subjects:	Annealing condition As-grown InAs/GaAs Modulation bandwidth Modulation characteristics Modulation efficiency Nonradiative recombination centers QD lasers Recombination process Ground state Modulation Rapid thermal annealing Semiconductor quantum dots Quantum dot lasers
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183911
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-183911
record_format	dspace
spelling	sg-nus-scholar.10635-1839112024-04-25T03:33:25Z Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing Zhao, H Yoon, S.F Ngo, C.Y Wang, R ELECTRICAL AND COMPUTER ENGINEERING Annealing condition As-grown InAs/GaAs Modulation bandwidth Modulation characteristics Modulation efficiency Nonradiative recombination centers QD lasers Recombination process Ground state Modulation Rapid thermal annealing Semiconductor quantum dots Quantum dot lasers 10.1186/1556-276X-6-382 Nanoscale Research Letters 6 1-May 2020-11-23T08:59:54Z 2020-11-23T08:59:54Z 2011 Article Zhao, H, Yoon, S.F, Ngo, C.Y, Wang, R (2011). Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing. Nanoscale Research Letters 6 : 1-May. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-6-382 1931-7573 https://scholarbank.nus.edu.sg/handle/10635/183911 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ SpringerOpen Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Annealing condition As-grown InAs/GaAs Modulation bandwidth Modulation characteristics Modulation efficiency Nonradiative recombination centers QD lasers Recombination process Ground state Modulation Rapid thermal annealing Semiconductor quantum dots Quantum dot lasers
spellingShingle	Annealing condition As-grown InAs/GaAs Modulation bandwidth Modulation characteristics Modulation efficiency Nonradiative recombination centers QD lasers Recombination process Ground state Modulation Rapid thermal annealing Semiconductor quantum dots Quantum dot lasers Zhao, H Yoon, S.F Ngo, C.Y Wang, R Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
description	10.1186/1556-276X-6-382
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Zhao, H Yoon, S.F Ngo, C.Y Wang, R
format	Article
author	Zhao, H Yoon, S.F Ngo, C.Y Wang, R
author_sort	Zhao, H
title	Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
title_short	Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
title_full	Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
title_fullStr	Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
title_full_unstemmed	Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing
title_sort	improved ground-state modulation characteristics in 1.3 ?m inas/gaas quantum dot lasers by rapid thermal annealing
publisher	SpringerOpen
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183911
_version_	1800914732376391680

Improved ground-state modulation characteristics in 1.3 ?m InAs/GaAs quantum dot lasers by rapid thermal annealing

Similar Items