Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition

InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 μm were self-assembled on InP substrate by using metal–organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the g...

Full description

Saved in:
Bibliographic Details
Main Authors: Tang, Xiaohong, Zhang, Baolin, Yin, Zongyou
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/82076
http://hdl.handle.net/10220/39757
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English