Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition
InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 μm were self-assembled on InP substrate by using metal–organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the g...
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| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
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2016
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| 在線閱讀: | https://hdl.handle.net/10356/82076 http://hdl.handle.net/10220/39757 |
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| 機構: | Nanyang Technological University |
| 語言: | English |