Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition
InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 μm were self-assembled on InP substrate by using metal–organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the g...
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Main Authors: | , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2016
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/82076 http://hdl.handle.net/10220/39757 |
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Institution: | Nanyang Technological University |
Language: | English |