Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition
InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 μm were self-assembled on InP substrate by using metal–organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the g...
Saved in:
Main Authors: | Tang, Xiaohong, Zhang, Baolin, Yin, Zongyou |
---|---|
其他作者: | School of Electrical and Electronic Engineering |
格式: | Article |
語言: | English |
出版: |
2016
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/82076 http://hdl.handle.net/10220/39757 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |
相似書籍
-
Azimuthally Polarized Radial Emission from a Quantum Dot Fiber Laser
由: Zhang, Nan, et al.
出版: (2017) -
Broadband absorption enhancement for InAsSb-based mid-infrared photodetectors
由: Wang, Weilin
出版: (2020) -
InAs self-organized quantum dots grown by molecular beam epitaxy using a "nucleation-augmented" method
由: Chia, C.K., et al.
出版: (2014) -
Towards a feasible implementation of quantum neural networks using quantum dots
由: Altaisky, Mikhail V., et al.
出版: (2016) -
Homogeneity improvement of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy
由: Suwit Kiravittaya
出版: (2006)