Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

• المؤلفون الرئيسيون: Hasanov, Namig, Zhu, Binbin, Sharma, Vijay Kumar, Lu, Shunpeng, Zhang, Yiping, Liu, Wei, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Light Emitting Diodes; Electrical Properties; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/89020; http://hdl.handle.net/10220/47008

In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well LEDs with a Ni/Ag/TiW metal stack are found to tolerate high-temperature anneal...