Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well LEDs with a Ni/Ag/TiW metal stack are found to tolerate high-temperature anneal...

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Bibliographic Details
Main Authors: Hasanov, Namig, Zhu, Binbin, Sharma, Vijay Kumar, Lu, Shunpeng, Zhang, Yiping, Liu, Wei, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/89020
http://hdl.handle.net/10220/47008
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Institution: Nanyang Technological University
Language: English

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