Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures

• Main Authors: Tobing, Landobasa Yosef Mario, Zhang, Dao-Hua, Tong, Jinchao, Xie, Yiyang, Xu, Zhengji, Qiu, Shupeng, Ni, Peinan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Semiconductors; Heterostructures; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/89148; http://hdl.handle.net/10220/47019
• Institution: Nanyang Technological University

We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivity occurred at room temperature; With the decrease of the forward bias, a turning point, at which the photocurrent changes its direction, exist and the corresponding voltage values increases with the decrease of temperature; At all reverse biases, the photocurrents flow in the same direction but the maximum current occurs at about 205 K. A new model is proposed, which can well explain all the observations.