Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack

• Main Authors: Kawashima, T., Yew, K. S., Kyuno, K., Zhou, Yu, Ang, Diing Shenp, Zhang, H. Z.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Infrared Spectra; Dielectrics; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/89762; http://hdl.handle.net/10220/46363
• Institution: Nanyang Technological University

We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost unchanged. Besides, the Ar plasma treatment suppresses...