Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack
We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost unchanged. Besides, the Ar plasma treatment suppresses...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/89762 http://hdl.handle.net/10220/46363 |
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| Institution: | Nanyang Technological University |
| Language: | English |