Electronic structure of graphene– and BN–supported phosphorene

• Main Authors: Kistanov, Andrey A., Saadatmand, Danial, Dmitriev, Sergey V., Zhou, Kun, Korznikova, Elena A., Davletshin, Artur R., Ustiuzhanina, Svetlana V.
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Phosphorene–graphene; DRNTU::Engineering::Mechanical engineering; Ab Initio Calculations
• Online Access: https://hdl.handle.net/10356/90092; http://hdl.handle.net/10220/48390
• Institution: Nanyang Technological University

By using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV...