Electronic structure of graphene– and BN–supported phosphorene

• المؤلفون الرئيسيون: Kistanov, Andrey A., Saadatmand, Danial, Dmitriev, Sergey V., Zhou, Kun, Korznikova, Elena A., Davletshin, Artur R., Ustiuzhanina, Svetlana V.
• مؤلفون آخرون: School of Mechanical and Aerospace Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Phosphorene–graphene; DRNTU::Engineering::Mechanical engineering; Ab Initio Calculations
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90092; http://hdl.handle.net/10220/48390

By using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV...