Computation of charge collection probability for any collecting junction shape

• المؤلفون الرئيسيون: Ong, Vincent K. S., Tan, Chee Chin, Kurniawan, Oka, Li, Erping
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90402; http://hdl.handle.net/10220/6321; http://www.isic2009.org/; http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403687&queryText%3DComputation+of+Charge+Collection+Probability+for+Any+Collecting+Junction+Shape%26openedRefinements%3D*%26searchField%3DSearch+All
• المؤسسة: Nanyang Technological University

Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been widely used for semiconductor devices and materials characterizations. The charge collection probability within a collecting junction plays an important role in determining the EBIC current. The conventional...