Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths

• Main Authors: Ong, Vincent K. S., Kurniawan, Oka.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/84920; http://hdl.handle.net/10220/4658
• Institution: Nanyang Technological University

Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...