Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/84920 http://hdl.handle.net/10220/4658 |
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