An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage
In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has...
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Main Authors: | , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/83147 http://hdl.handle.net/10220/49113 |
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Institution: | Nanyang Technological University |
Language: | English |