The impact of boron halo on phosphorus junction formation and stability

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Chan, L., Srinivasan, M.P.
Published 2014

The impact of boron halo on phosphorus junction formation and stability

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Chan, L., Srinivasan, M.P.
Published 2014

Defect engineering for ultrashallow junctions using surfaces

by Seebauer, E.G., Yeong, S.H., Srinivasan, M.P., Kwok, C.T.M., Vaidyanathan, R., Colombeau, B., Chan, L.
Published 2014

Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal

by Yeong, S.H., Colombeau, B., Benistant, F., Srinivasan, M.P., Mulcahy, C.P.A., Lee, P.S., Chan, L.
Published 2014

Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal

by Yeong, S.H., Colombeau, B., Benistant, F., Srinivasan, M.P., Mulcahy, C.P.A., Lee, P.S., Chan, L.
Published 2014

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

by Mok, K.R.C., Yeong, S.H., Colombeau, B., Benistant, F., Poon, C.H., Chan, L., Srinivasan, M.P.
Published 2014

Defect engineering by surface chemical state in boron-doped preamorphized silicon

by Yeong, S.H., Srinivasan, M.P., Colombeau, B., Chan, L., Akkipeddi, R., Kwok, C.T.M., Vaidyanathan, R., Seebauer, E.G.
Published 2014

Defect engineering for ultrashallow junctions using surfaces

by Seebauer, E.G., Kwok, C.T.M., Vaidyanathan, R., Kondratenko, Y.V., Yeong, S.H., Srinivasan, M.P., Colombeau, B., Chan, L.
Published 2014

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P.
Published 2014

Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealing

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Chan, L., Ramam, A., Srinivasan, M.P.
Published 2014

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

by Mok, K.R.C., Colombeau, B., Jaraiz, M., Castrillo, P., Rubio, J.E., Pinacho, R., Srinivasan, M.P., Benistant, F., Martin-Bragado, I., Hamilton, J.J.
Published 2014

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

by Tan, D.X.M., Pey, K.L., Ong, K.K., Colombeau, B., Ng, C.M., Yeong, S.H., Wee, A.T.S., Liu, C.J., Wang, X.C.
Published 2014

An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

by Tan, Dexter Xue Ming, Pey, Kin Leong, Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Ng, C. M., Chan, L., Srinivasan, M. P.
Published 2019

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

by Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
Published 2014

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

by Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
Published 2014