Comprehensive model of damage accumulation in silicon

by Mok, K.R.C., Benistant, F., Jaraiz, M., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P.
Published 2014

Comprehensive modeling of ion-implant amorphization in silicon

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

Bimodal distribution of damage morphology generated by ion implantation

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

by Mok, K.R.C., Colombeau, B., Jaraiz, M., Castrillo, P., Rubio, J.E., Pinacho, R., Srinivasan, M.P., Benistant, F., Martin-Bragado, I., Hamilton, J.J.
Published 2014