Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

Materials Research Society Symposium Proceedings

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Bibliographic Details
Main Authors: Mok, K.R.C., Colombeau, B., Jaraiz, M., Castrillo, P., Rubio, J.E., Pinacho, R., Srinivasan, M.P., Benistant, F., Martin-Bragado, I., Hamilton, J.J.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/90621
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/90621

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