An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

• Main Authors: Tan, Dexter Xue Ming, Pey, Kin Leong, Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Ng, C. M., Chan, L., Srinivasan, M. P.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Flash Lamp Annealing; Boron; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/83147; http://hdl.handle.net/10220/49113
• Institution: Nanyang Technological University

In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has...