Effects of copper diffusion on the performance of MOS devices

• Main Author: Tee, Kheng Chok.
• Other Authors: Prasad, K.
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: http://hdl.handle.net/10356/3535
• Institution: Nanyang Technological University

Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.