Effects of copper diffusion on the performance of MOS devices
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.
Saved in:
Main Author: | Tee, Kheng Chok. |
---|---|
Other Authors: | Prasad, K. |
Format: | Theses and Dissertations |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/3535 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Study of copper diffusion in tantalum based barrier materials
by: Loh, Seow Wee.
Published: (2008) -
Stress measurement in copper films
by: Teo, Chee Hiang.
Published: (2008) -
Electrochemical plated copper for interconnect applications
by: Loh, Stephen Soon Ann.
Published: (2008) -
Ferromagnetic copper-doped ZnO for spintronics
by: Herng, Tun Seng
Published: (2008) -
Characterization of copper chemical mechanical polishing induced defects
by: Teo, Tai Yong.
Published: (2008)