Effects of copper diffusion on the performance of MOS devices
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/3535 |
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Institution: | Nanyang Technological University |
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