Effects of copper diffusion on the performance of MOS devices

Effects of copper diffusion on the performance of MOS devices

Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.

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Bibliographic Details
Main Author: Tee, Kheng Chok.
Other Authors: Prasad, K.
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3535
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Institution: Nanyang Technological University
Description
Summary:Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.

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