Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100  degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the...

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Main Authors: Ding, Liang, Liu, Yang, Chen, Tupei, Cen, Zhan Hong, Wong, Jen It, Yang, Ming, Liu, Zhen, Goh, Wei Peng, Zhu, Fu Rong, Fung, Stevenson Hon Yuen
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2010
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在線閱讀:https://hdl.handle.net/10356/90509
http://hdl.handle.net/10220/6423
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機構: Nanyang Technological University
語言: English