Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than t...
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Main Authors: | , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/90586 http://hdl.handle.net/10220/6426 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also. |
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