Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than t...
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sg-ntu-dr.10356-905862020-03-07T14:02:37Z Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams Ng, Chi Yung Chen, Tupei Zhao, P. Ding, Liang Liu, Yang Tseng, Ampere A. Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also. Published version 2010-09-07T08:17:15Z 2019-12-06T17:50:23Z 2010-09-07T08:17:15Z 2019-12-06T17:50:23Z 2006 2006 Journal Article Ng, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3. 0021-8979 https://hdl.handle.net/10356/90586 http://hdl.handle.net/10220/6426 10.1063/1.2191737 en Journal of applied physics Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v99/i10/p106105_s1?isAuthorized=no 3 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ng, Chi Yung Chen, Tupei Zhao, P. Ding, Liang Liu, Yang Tseng, Ampere A. Fung, Stevenson Hon Yuen Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
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A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Ng, Chi Yung Chen, Tupei Zhao, P. Ding, Liang Liu, Yang Tseng, Ampere A. Fung, Stevenson Hon Yuen |
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Article |
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Ng, Chi Yung Chen, Tupei Zhao, P. Ding, Liang Liu, Yang Tseng, Ampere A. Fung, Stevenson Hon Yuen |
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Ng, Chi Yung |
title |
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
title_short |
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
title_full |
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
title_fullStr |
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
title_full_unstemmed |
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
title_sort |
electrical characteristics of si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
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2010 |
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https://hdl.handle.net/10356/90586 http://hdl.handle.net/10220/6426 |
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1681046957953384448 |