Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

• Main Authors: Ng, Chi Yung, Chen, Tupei, Zhao, P., Ding, Liang, Liu, Yang, Tseng, Ampere A., Fung, Stevenson Hon Yuen
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• 在線閱讀: https://hdl.handle.net/10356/90586; http://hdl.handle.net/10220/6426
• 機構: Nanyang Technological University

A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than t...