Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay

• Main Authors: Tseng, Ampere A., Ng, Chi Yung, Chen, Tupei, Tse, Man Siu, Fung, Stevenson Hon Yuen, Lim, Vanissa Sei Wei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/90604; http://hdl.handle.net/10220/6355
• Institution: Nanyang Technological University

Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si.