A voltage scalable 0.26 V, 64 kb 8T SRAM with Vmin lowering techniques and deep sleep mode

• المؤلفون الرئيسيون: Kim, Tony Tae-Hyoung, Liu, Jason., Kim, Chris H.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90787; http://hdl.handle.net/10220/6309
• المؤسسة: Nanyang Technological University

A voltage scalable 0.26 V, 64 kb 8T SRAM with 512 cells per bitline is implemented in a 130 nm CMOS process. Utilization of the reverse short channel effect in a SRAM cell design improves cell write margin and read performance without the aid of peripheral circuits. A marginal bitline leakage compen...