Profile of optical constants of SiO2 thin films containing Si nanocrystals

For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantatio...

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Main Authors: Dong, Gui, Chen, Tupei, Liu, Yang, Tse, Man Siu, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
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Online Access:https://hdl.handle.net/10356/90789
http://hdl.handle.net/10220/6412
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-907892020-03-07T14:02:40Z Profile of optical constants of SiO2 thin films containing Si nanocrystals Dong, Gui Chen, Tupei Liu, Yang Tse, Man Siu Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. In this approach, the nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement is modeled with the approximation of many sublayers, and for a given wavelength the optical constants of each sublayer are formulated with the nc-Si volume fraction in the sublayer and the nc-Si optical constants as variables based on the effective medium approximation. After the above procedures the nc-Si optical constants are obtained from the spectral ellipsometric fittings. Finally the optical constants of each sublayer are calculated, and thus the depth profiles of the optical constants for the SiO2 thin film containing the nc-Si are obtained. Published version 2010-09-07T01:38:07Z 2019-12-06T17:54:04Z 2010-09-07T01:38:07Z 2019-12-06T17:54:04Z 2004 2004 Journal Article Dong, G., Chen, T. P., Liu, Y., Tse, M. S., & Fung, S. H. Y. (2004). Profile of optical constants of SiO2 thin films containing Si nanocrystals. Journal of Applied Physics, 95(12), 8481-8483. 0021-8979 https://hdl.handle.net/10356/90789 http://hdl.handle.net/10220/6412 10.1063/1.1739282 en Journal of applied physics Journal of Applied Physics © copyright 2004 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v95/i12/p8481_s1?isAuthorized=no 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Dong, Gui
Chen, Tupei
Liu, Yang
Tse, Man Siu
Fung, Stevenson Hon Yuen
Profile of optical constants of SiO2 thin films containing Si nanocrystals
description For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. In this approach, the nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement is modeled with the approximation of many sublayers, and for a given wavelength the optical constants of each sublayer are formulated with the nc-Si volume fraction in the sublayer and the nc-Si optical constants as variables based on the effective medium approximation. After the above procedures the nc-Si optical constants are obtained from the spectral ellipsometric fittings. Finally the optical constants of each sublayer are calculated, and thus the depth profiles of the optical constants for the SiO2 thin film containing the nc-Si are obtained.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Dong, Gui
Chen, Tupei
Liu, Yang
Tse, Man Siu
Fung, Stevenson Hon Yuen
format Article
author Dong, Gui
Chen, Tupei
Liu, Yang
Tse, Man Siu
Fung, Stevenson Hon Yuen
author_sort Dong, Gui
title Profile of optical constants of SiO2 thin films containing Si nanocrystals
title_short Profile of optical constants of SiO2 thin films containing Si nanocrystals
title_full Profile of optical constants of SiO2 thin films containing Si nanocrystals
title_fullStr Profile of optical constants of SiO2 thin films containing Si nanocrystals
title_full_unstemmed Profile of optical constants of SiO2 thin films containing Si nanocrystals
title_sort profile of optical constants of sio2 thin films containing si nanocrystals
publishDate 2010
url https://hdl.handle.net/10356/90789
http://hdl.handle.net/10220/6412
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