Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix

• Main Authors: Ding, Liang, Chen, Tupei, Liu, Yang, Ng, Chi Yung, Liu, Yu Chan, Fung, Stevenson Hon Yuen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/90792; http://hdl.handle.net/10220/6398
• Institution: Nanyang Technological University

The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. Th...