A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation

• Main Authors: Yeo, Kiat Seng, Lee, Heng Kah, Do, Manh Anh
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: https://hdl.handle.net/10356/90959; http://hdl.handle.net/10220/4560
• Institution: Nanyang Technological University

This paper presents a novel BiNMOS logic gate specially designed for single battery operation (1.2-1.5 V). Through the use of two capacitors, in the pre-charging and bootstrapping cycles, the circuit achieves a high-speed and full-swing operation. Analytical expressions for the circuit were derived, and the main design considerations were addressed. Based on a 0.5 μm BiCMOS technology, HSPICE simulation results have proven the superiority of the new circuit over the CMOS, BFBiNMOS and BSBiNMOS circuits in terms of speed and power consumption. The circuit also occupies the smallest area amongst the BiNMOS families. A 75-stage ring oscillator of the new circuit was fabricated using a 0.8 μm BiCMOS process, and the measured gate delay/stage is merely 1.32 ns at a supply voltage of 1.5 V and a load capacitance of 1 pF.